Concealment of Time Delay Signature of Chaotic Semiconductor Nanolasers With Double Chaotic Optical Injections

The time delay signature (TDS) concealment properties of a novel semiconductor nanolaser subject to double chaotic optical injections are investigated numerically. The TDS concealment is evaluated by the peak size of the autocorrelation function (ACF). The effects of feedback rate, injection rate, frequency detuning, Purcell cavity-enhanced spontaneous emission factor, and spontaneous emission coupling factor on the TDS concealment are carefully examined. It is found that, with the double chaotic optical injections, the TDS can be concealed in wide ranges of feedback rate, injection rate, and frequency detuning. Moreover, better TDS concealment can be achieved for a smaller frequency detuning and a larger injection rate. The 2-D maps of peak size of ACF further show that the range of parameter space contributing to better TDS concealment is wider for a moderate Purcell cavity-enhanced spontaneous emission factor and a smaller spontaneous emission coupling factor. These results may be interesting for the enhanced chaotic sources on-a-chip based on novel semiconductor nanolasers.