Low-Temperature Front-Side BEOL Technology with Circuit Level Multiline Thru-Reflect-Line Kit for III-V MOSFETs on Silicon

A multiline Thru-Reflect-Line (mTRL) calibration and parasitic pad removal kit is presented, intended for mm-wave III-V nanowire MOSFET characterization. Multiline TRL is implemented in a low-temperature BEOL process with substrate decoupled microstrip transmission lines. The transmission line characteristic impedance needed for accurate mTRL calibration is modelled. Simulated transmission line parameters show a good fit with measured transmission line data, including line characteristic impedance variation. Line loss less than 0.5 dB/mm up to 50 GHz is obtained. Finally, interconnect via section is calibrated and modelled, showing mTRL's ability to obtain small parasitic parameters.