Editorial for the special issue on applications of wide bandgap devices

The emergence of wide bandgap (WBG) semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) devices promises to revolutionize next-generation power electronics converters. Featuring high breakdown electric field, low specific on-resistance, fast switching speed, and high junction temperature capability, these devices are beneficial for the efficiency, power density, reliability, and/or cost of power electronics converters. WBG devices have been employed in some commercial and industrial products with more applications expected in near future. However, extremely fast switching and other superior characteristics of WBG device, and high switching frequency/high voltage/high junction temperature operation, present new design challenges in gate drive and protection, packaging and layout, EMI suppression, and converter control, etc. Addressing these design and application issues is critical to the adoption, commercialization, and success of WBG based power electronics. This special issue intends to report the latest progress in these important areas.