High-Performance Nanowire-Based E-Mode Power GaN MOSHEMTs With Large Work-Function Gate Metal

In this letter, we demonstrate high-performance enhancement-mode (E-mode) GaN metal-oxide-semiconductor high-electron-mobility transistors on a Si substrate based on sidewall depletion achieved by nanostructured gate with large work-function metal. The devices presented threshold voltage (V
_TH
) over 0.6 V at 1 μmA/mm, large current density (I
_DS
) up to 590 mA/mm, low specific ON resistance (R
_ON,SP
) of 1.33 mΩ · cm
²
, high ON/OFF ratio over 10
¹⁰
, and large breakdown voltage (V
_BR
) of 1080 V at 1 μmA/mm with a grounded substrate. The excellent high-power FOM of 877 MW/cm
²
reveals the potential of our approach to obtain the E-mode operation while maintaining exceptional ON-state performance and high V
_BR
.