Indium Oxide Nanostructure Optimization for RRAM Integration on CMOS BEOL

This work report on the integration of indium oxide (In2O3) nanocrystals (NCs) for Resistive Random Access Memory (RRAM) applications. The RRAM integration based on MOCVD and ALD depositions is fully compatible fabrication process with CMOS of back-end-off-line. A bipolar switching behavior is clearly linked to In2O3 NC. First RRAM prototypes with HRS/LRS ratios higher than 104 are measured. Device parameter dispersion is observed mainly for Vreset. The NC density has been increased from 3. 108 cm-2 to 2. 10 10 cm-2 with an average NC diameter reduced from 12 nm to 4 nm. The optimization of NC's size dispersion and density is finally expected to reduce the observed parameter dispersion.