LTPS-TFTs integrated in RDL for High-End FOPLP Application

In order to add the value of FOPLP technology, low temperature poly-silicon thin-film transistor (LTPS-TFT) integrated in RDL with panel level technology has been evaluated. LTPS-TFTs need to be protected by the barrier structure in Cu plating process due to the high concentration of Cu ion. The conception of active device in RDL will be realized by using LTPS-TFT for the high-end FOPLP application such as ESD protection.