DPPM Reduction Methods and New Defect Oriented Test Methods Applied to Advanced FinFET Technologies

This paper presents DPPM reduction results achieved with new Defect Oriented Test (DOT) methods/patterns applied to designs manufactured in advanced FinFET technologies. Focus of this paper is on Timing-Aware Cell-Aware Test (TA-CAT) patterns targeting small-delay defects of FinFET transistors, and a new DOT method which explicitly targets chip layout dependent cell-neighborhood defects. Test results from traditional Stuck-at/Transition patterns, from traditional CAT patterns, from TA-CAT patterns, and as well from cell-neighborhood patterns, applied to FinFET technology designs, will be presented in this paper. In addition, a correlation to System-Level-Test fails will be discussed.