Analysis of Process Variations, Defects, and Design-Induced Coupling in Memristors

Emerging devices are susceptible to process variations and manufacturing defects due to immature fabrication processes. Memristors constitute a promising emerging technology, but they are known to suffer from high defect rates that contribute to faulty behavior. It is therefore important to analyze memristor fault models and understand the root causes of defects and variations. We present a physics-based classification and analysis of memristor fault origins. These fault origins are systematically attributed to process variations and manufacturing defects. We also investigate coupling in dense memristor crossbars. This study of memristor fault origins and the resulting conclusions provides valuable feedback for the fabrication and the design of memristor-based circuits and systems.