Waveform-Based Design of a 2.8-GHz Self Synchronous Class-E RF-DC Rectifier with GaN Transistor

Based on a modified GaN transistor's EEHEMT model including the negative drain bias data, a design method of a self synchronous RF-DC rectifier is proposed in this paper. The gate drive is directly coupled from an RF power input, and no additional gate input or phase-shifter is required. With the aid of internal drain voltage and current probes of an open EEHEMT model, a waveform-based design method can be applied to realize a standard class-E rectifier. The measurements show that this rectifier can achieve efficiency of 70.9%, output power of 7.13 W, output dc voltage of 18.88 V at 2.8 GHz.