Fully Additively Manufactured Broadband Low Loss High Frequency Interconnects

Presented is a fully additively manufactured high frequency interconnect to a commercial semiconductor device. The strategy shown demonstrates excellent performance through the operating range of the connected device, a wide-band fixed attenuator MMIC, achieving loss of 0.22 dB per interconnect at 20 GHz including a 1.9 mm transmission line to the device. This methodology addresses the problems that plague traditional interconnect techniques and provides a flexible design solution enabling next-generation high frequency System-In-Package (SIP) technology. Additionally, this approach uses high temperature capable materials, making it suitable for high power applications. Simulated and measured results are shown.