A Small Signal Model for Carbon Nanotube Field-Effect Transistor

A new small signal model is presented to accurately describe the ac characteristics of carbon nanotube field-effect transistor (CNTFET). This model includes a new equivalent circuit that describes the effect of the Schottky barrier (SB) formed in the CNT and metal contact on ac small signal. The accumulation of charge in the channel is also considered while modeling the ballistic transport in intrinsic channels. The model has been implemented in SPICE-like environment, making it widely available across circuit simulators. Under multiple biases, the simulation results agree well with the measured data. Therefore, the topology of this model can be used to further build large-signal models.