Comprehensive Study on the “Anomalous” Complex RTN in Advanced Multi-Fin Bulk FinFET Technology

In this paper, random telegraph noise (RTN) in advanced multi-Fin bulk FinFETs are comprehensively studied for the first time. Based on the statistical experiments, the complete categories of simple and complex RTNs are identified and analyzed in details. Especially, the anomalous “reversal RTN” induced by 2 metastable states in single oxide trap, are found not rare, but appears at a certain percentage, which provides a unique opportunity for statistically studying the metastable states directly from RTN measurements. In addition, anomalous layout dependence of RTN amplitudes are observed, with respects to Fin number. The results are helpful for deep understanding of reliability physics and robust circuit design against RTN.