$0.63\ \mathrm{m}\Omega \text{cm}^{2}$ / 1170 V 4H-SiC Super Junction V-Groove Trench MOSFET

4H-SiC super junction, 0.63 mΩcm
²
and 1170 V, V-groove trench MOSFETs (SJ-VMOSFET) were demonstrated. The specific on-resistance (Ron,sp) of the SJ-VMOSFET is the lowest ever among all the reported SiC-MOSFETs with the blocking voltage (Bv) over 600 V. Superior electrical properties were realized with the structural combination of the V-groove MOS channel and the charge balance at super junction area. The Ron,sp analysis of SJ-VMOSFET was carried out after mounted on a TO-268 5pin package having a Kelvin source terminal. The V-groove {033 8} channels could keep a high inversion mobility even in increasing doping concentration over 1×10
¹⁸
cm
^-3
. The excellent-static and -dynamic performances of SJ-VMOSFET were allowed to realize the ultra-low loss switching applications.