1-26 GHz high power p-i-n diode switch

Wideband high power GaAs p-i-n diode SPDT switch is presented. Insertion loss is less than 0.7 dB and isolation is better than -38 dB for 1-26 GHz frequency range. Maximum power handling capability is 35 dBm at 1.8 GHz where the bias voltage is -15 V. Composite buffer layer of superlattice and low temperature grown GaAs prevent the problems of power limitation related to epitaxial buffer layer of p-i-n diode structure.