RF loss and crosstalk on extremely high resistivity (10 k-1 M/spl Omega/-cm) Si fabricated by ion implantation

We have achieved 1.6 M/spl Omega/-cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10 /spl mu/m gap) at 20 GHz are measured with 1 /spl mu/m Al, respectively, which is due to implant induced trap with /spl sim/1 ps carrier lifetime and stable to 400/spl deg/C.