Characterization of source-to-drain capacitance (C/sub ds/) effect of GaAs PHEMT for millimeter wave switch

This paper represents the device parameter influence of GaAs PHEMT with different gate lengths on switching performance and its application in DC-50GHz wide-band SPST monolithic switch ICs. From the characteristic of GaAs PHEMT and monolithic switch, especially, it is proved experimentally that source-to-drain capacitance dependent on gate length is a very important characteristic for improving the isolation performance of GaAs PHEMT switch at high-impedance state.