Self Aligning Growth of Nanoparticle-Based Interconnects

This paper presents a self-adjusting nanowire bonding process to produce free-standing point-to-point electrical connections. Wire diameters up to 200 nm and contact pads up to 1 μrm are shown. In addition, the process is a parallel process to achieve higher throughput compared to the new serial direct write or established serial wire bonding methods. Generated nanoparticles are captured directly on the substrate, resulting in a high material yield. The method presented is based on what is best described as “gas-phase electrodeposition”.