Comparative analysis of MOSFET and STBFET based amplifier for analog application

In this work we have analyzed the impact of charge carrier's injection mechanism on analog performance of amplifier. The present study is based on comparative analysis of two different FET based amplifiers i.e., Metal Oxide Semiconductor FET (MOSFET) amplifier and Sandwich Tunnel Barrier FET (STBFET) amplifier. The performance parameters for both the devices such as output characteristics, transfer characteristics, trans-conductance, output resistance, transconductance to drive current ratio, intrinsic gain, and unity gain cutoff frequency have been analyzed using numerical simulations. The analog performance of STBFET, which shows good drain current saturation, has been analyzed. Moreover its high trans-conductance to drive current ratio makes it suitable for high frequency applications. The output resistance of STBFET is found to be more than eight orders of magnitude higher than that for the MOSFET. Further STBFET based common source (CS) resistive load amplifier shows 2 to 3 times variations in amplification with variable load than that of MOSFET based amplifier. The qualitative analysis with variable input bias, oxide thickness and peak to peak swing is also reported.