Nonlinear Electron Transport Mobility in GaAs/Al x Ga1-x As Square - Parabolic Double Quantum Well MODFET Structure

We study doping dependence nonlinear electron transport mobility μ
_t
in a GaAs/Al
_x
Ga
_1-x
As double quantum well MODFET structure. We consider square (parabolic) well towards the substrate (surface) side of the structure. The side barrier towards the substrate (surface) is modulation delta doped with Si of doping concentration Nd
_sub
(Nd
_sur
). We analyze μ
_t
as function of Nd
_sub
(keeping Nd
_sur
constant) by considering different scattering mechanisms such as: ionized impurity (Imp-), alloy disorder (Al-) and interface roughness (Ir-). We show that μ
_t
is mainly decided by μ
_Imp
whereas μ
_Ir
reduces the overall μ
_t
. We also show that nonlinear μt can be achieved during double subband occupancy and attain minimum at the anticrossing of subband states which occur for Nd
_sub
<; Nd
_sur
. There is also a sudden enhancement of μ
_t
due to the cease of intersubband effects at (Nd
_sub
)trans where double to single subband occupancy takes place. It is gratifying to show that increasing well width w enhances μ
_t
as well as transition from double to single occur for higher value of (Nd
_sub
)trans. Our results can be utilized for the analysis of improvement of channel conductivity of double quantum well MODFET structure.