Optical-Response Analysis of Voltage-Modulated 1.3 μm Wavelength AlGaInAs/InP Transistor Laser

Transistor Laser (TL) has multiple modulation methods by a combination of terminal connection because it has three electrical terminals unlike the laser diodes. In this report, for the voltage modulation of the TL, the light output response under a large signal voltage modulation was simulated. By considering the transient change of the current in the active layer, we succeeded in reproducing the light output having the peak in the opposite direction to the steady state observed with the actual device so far. Based on the simulation, the optimum collector-base capacitance in the actual device and the minimum required end-facet reflectance for securing a high extinction ratio were obtained.