Investigation on Reduced Graphene Oxide for Radiation Sensing Application

In this work, reduced graphene oxide in field effect transistor architecture has been explored for the detection of ionizing radiation. The reduced graphene oxide is prepared from Graphene oxide through thermal annealing at low temperature under vacuum environment. The technical approach is to utilize the sensitive dependence of the electrical conductivity of graphene-based compounds on a local electric field, which can be abruptly changed by the charge carriers produced by radiation absorbed in the underlying absorber material.