Simulating Optical Behavior of Nano Dimensional InAlAs/InGaAs HEMT for IoT Applications

Recent interest in the optical behavior of bulk semiconductor based alloy heterostructures [1-3] has led to this work that simulates the effect of optical illumination on the DC parameters of 100 nm InAlAs/InGaAs High Electron Mobility Transistor (HEMT). This paper uses a C-interpreter function in the Silvaco Device Simulator that gives the flexibility of defining the photogeneration rate as a position/time dependent function. The modeling of photogeneration rate as a function of position in the device helps us to analyze the effect of illumination in the different regions of the device and its impact on the device parameters. The simulation results suggest an improvement in the device performance under illumination predicting possible applications in high frequency optoelectronics.