Design and Fabrication of 1.2kV/40m Ω 4H-SiC MOSFET

A 4H-SiC MOSFET with breakdown voltage higher than 1200V has been successfully designed and fabricated. Numerical simulations have been performed to optimize the parameters of DMOSFET. The n-type epilayer is 10 μm thick with a doping of 1×10
¹⁶
cm
^-3
. The devices were fabricated with a floating guard ring edge termination. The drain current I
_d
= 20 A at V
_g
= 20 V, corresponding to V
_d
≤ 1.6 V.