Evaluation of (Bi, La)4Ti3012 Thin Film for Capacitor-Type Synapses

We evaluated (Bi, La)
₄
Ti
₃
O
₁₂
(BLT) thin films for capacitor-type synapses. The ferroelectric thin films were formed by a sol-gel method. The hysteresis characteristics of the ferroelectric thin films were evaluated using a Sawyer-Tower-Circuit. The results show that the larger the film thickness of the ferroelectric thin film, the more useful it is as synapses.