Flexible Low-Voltage IGZO Thin-Film Transistors With Polymer Electret Gate Dielectrics on Paper Substrates

Polymer electret shows a good electrostatic polarization effect, resulting in very high-density charge accumulation in semiconducting channel layer at low gate voltage. In this letter, graphene oxide enhanced poly(vinyl alcohol) film was used as the gate dielectric for flexible low-voltage indium-gallium-zinc-oxide thin-film transistors (TFTs) on paper substrates. High performance with a high current ON/OFF ratio of
$\sim 1.8\times 10^{\textsf {7}}$
, a large field-effect mobility of ~42 cm
²
V
⁻¹
s
⁻¹
, and a low subthreshold swing of 106 mV/decade was obtained. In addition, such flexible TFTs exhibit a good stability under bending condition due to the reinforcement effect of graphene oxide. Such flexible TFTs on paper substrates have potential application in next-generation low-cost flexible paper electronics.