Impact of the Elemental Makeup of an IC in Generating Single-Event Upsets From Low-Energy (<10 MeV) Neutrons: A 3-D nand Flash Case Study

Neutron-induced single event upsets (SEUs) have become a significant reliability concern for advanced electronics. Ever-shrinking device sizes and the introduction of new elements in state-of-the-art integrated circuits (ICs) have increased device neutron SEU susceptibility. Various elements found in ICs each have a role in producing SEUs from low-energy neutrons (sub-10 MeV). This paper explores the role these elements play in a case study of a state-of-the-art 3-D NAND flash.