Thermally Triggered SiC MOSFET Aging Effect on Conducted EMI

In this paper, thermally triggered SiC MOSFET aging effect on SiC based boost PFC converter's conducted EMI is investigated. Existing EMI evaluation and suppression studies are mostly based on power devices at healthy state. This study provides a comprehensive EMI evaluation at different state of health of SiC MOSFET used in continuous conduction mode (CCM) Boost PFC converter. For this purpose, SiC MOSFET samples are exposed to accelerated aging and the corresponding device degradations are triggered by thermal stresses. To study device characteristics at different state of health, devices under test (DUT) electrical parameters and switching transients are evaluated over aging to support SiC based AC/DC converter's conducted EMI discussion. Respectively, device aging effect on differential mode (DM) noise and common mode (CM) noise changes are discussed in detail. An 800W single phase CCM Boost PFC prototype is built to evaluate both DM and CM noise in band B frequency range (150kHz~30MHz) with experimental testing results. According to the study, high frequency noise decrement is observed after SiC MOSFET is thermally aged.