Static and Dynamic Characterization of a 2.5 kV SiC MOSFET

In this work, a 2.5 kV discrete SiC MOSFET manufactured by GE with a 58 A current rating and a 40 m Ω on-resistance is characterized, both statically and dynamically. The high current capabilities within a discrete package at 2.5 kV MOSFET offers improved performance differentiation when compared to both traditional 1.7 kV discrete devices and 3.3 kV power modules. This device is characterized statically, dynamically and under increased temperature conditions up to 200°C. A clamped, inductive test circuit is used to conduct the double pulse tests necessary to determine the switching energy losses. These measurements are compared to a commercially available SiC MOSFET that is similarly rated.