Experimental study on plasma engineering in 6500 V IGBTs

This paper discusses the design of high-voltage Insulated Gate Bipolar Transistors (IGBTs), especially the effects on the on-state excess carrier distribution and its consequences for the IGBT's on-state, turn-off and Safe Operating Area (SOA) properties. It is concluded that by careful design, considerable robustness is achievable together with total losses that are comparable to a state-of-the-art GCT Thyristor of similar voltage class.