A Novel photodetector with the embedded field-induced p-n photodiode in the SOI Substrate

In this work, we demonstrate that the photodetector based on the silicon-on-insulator (SOI) substrate with field-induced p-n diode has high responsivity and a characterization similar to that formed by ion implantation. From the TCAD simulation, the light absorption induced V
_T
shift is caused by the field-induced p-n diode formed in the linear region. The structure design and fabrication technology are discussed. The experimental results are supported by the TCAD simulations.