A 25-31 GHz 6-bit Switch-type Phase Shifter in 0.13um SOI CMOS Process for 5G mmWave Phased Array Communications

This paper presents a 25-31 GHz 6-bit switch-type phase shifter in 0.13um SOI CMOS process developed for 5G phased array communications. Different phase shifting topologies are analyzed and selected for each phase shifting bit to minimize the phase and insertion loss variation over the designed bandwidth. The phase shifter has a simulated average insertion loss of 6.5 dB at 28 GHz center frequency. The RMS phase and amplitude errors are less than 1.8° and 0.6 dB respectively over 64 phase states. The results show SOI CMOS is promising to replace GaAs to implement high performance millimeter wave phase shifter.