Influence of base structural parameters on responsivity and characteristic frequency of SiGe Heterojunction Phototransistor

The effect of different base structural parameters on SiGe Heterojunction Phototransistor (HPT) performance is analyzed in this paper. It proposes a reference for designing SiGe HPT with both high responsivity and high characteristic frequency. Responsivity of 5.58 A/W and characteristic frequency of 21.29 GHz for 850 nm light are achieved when the thickness of base layer is 70 nm with the doping concentration of 1.0×10
¹⁹
cm
^-3
.