Design of Power Clamp Circuit with Diode String and Feedback Enhanced Triggering in advanced SOI BCD Process

A novel power clamp circuit is proposed in this paper. By utilizing the feedback technology, BigFET turning on time is increased to 591ns which is 7 times as long as the traditional one. The layout area is efficiently occupied in the novel power clamp circuit which replaces the detective capacitor by a diode string. The proposed circuit has low leakage current and significant ESD performance validated in a 0.18μm SOI BCD process.