Design and Optimization of Four-Region Multistep Field Limiting Rings for 10kV 4H-SiC IGBTs

A novel edge termination structure with Four-Region Multistep Field Limiting Rings (FRM-FLRs) is proposed and investigated for 10kV 4H-SiC IGBTs. The structure with FRM-FLRs terminal technology exhibits a good blocking performance with 30% less terminal area and 23% higher blocking voltage compared with the conventional Filed limiting Rings (Con-FLRs) structure. Moreover, the structure with FRM-FLRs can decrease the sensitivity of the interface charges, which greatly improves the reliability of the device at the off-state.