Coulomb Interaction in One Dimensional Transport of Silicon Junctionless Nanowire Transistor

Silicon junctionless nanowire transistors with the typical nanowire section of 18 nm width and 30nm height are fabricated and the current-voltage characteristics are measured at low temperatures in this paper. We demonstrate the one-dimension electronic transport behavior from the quantized current steps and transconductance oscillation. Moreover, the Coulomb interaction related transport behaviors are observed below the temperature of about 30 K, supporting by the double sub-peaks in the transconductance characteristics.