Wide SOA and High Reliability 60-100 V LDMOS Transistors with Low Switching Loss and Low Specific On-Resistance

This paper describes wide SOA and high reliability 0.35 μm CMOS compatible 60-100 V dual RESURF LDMOS transistors with low switching loss and low specific on-resistance for automotive applications. TCAD simulations verified that the proposed devices have sufficiently weak drain current expansion resulting in wide SOA, and low electric fields near the gate-side drift region edge leading to high reliability for hot carriers. R
_on,sp
vs. BV
_DS
characteristics for the proposed devices are at the state-of-the-art level (R
_on,sp
/BV
_DS
: 78 mΩ·mm
²
/89 V for a rated voltage of 60 V and 150 mΩ·mm
²
/133 V for a rated voltage of 100 V). Furthermore, the FOM (R
_on,sp
×Q
_g
) value of the proposed device for a rated voltage of 100 V is 159 mΩ·nC, which is about 60 % lower than that of a conventional device.