A novel SiGe heterojunction phototransistor detector based on silicon-on-insulator substrate

By replacing the common Si substrate with the silicon-on-insulator (SOI) substrate, a low dark current, high responsivity and high response speed novel SiGe heterojunction phototransistor (HPT) detector is illustrated in this paper. The dark current of novel SOI-based SiGe HPT is as low as 0.91nA. The maximum responsivity of novel SOI-based SiGe HPT is 3.86A/W, a 37.86% improvement than the value obtained from common Si-based SiGe HPT. The maximum photo-characteristic frequency (f
_T
,
_ph
) reach up to 26.43GHz, improved by1.94 times.