Temperature-dependent mobility characteristics in one-dimension transport in junctionless nanowire transistor

The n-type junctionless nanowire transistor was successfully fabricated on the silicon-on-insulator substrate. Its core component, silicon nanowires, is defined by processes such as electron beam exposure and inductively coupled plasma etching. We observed a transition from quantum dot transport to one-dimension transport with the gate voltage increasing. The temperature-dependent effective mobility characteristics of the electron transport through conduction band and impurity band are analyzed.