SRAM Single Event Effect Simulation Method Based on Random Injection Mechanism

With the continuous progress of integrated circuit manufacturing technology, the influence of Single Event Upset (SEU) on SRAM is more and more serious. Firstly, the TCAD tool is used to obtain the transient current under different LET values. Secondly, based on the obtained transient current, a fault current source with random injection mechanism is constructed, and randomization of particles incident time, incident circuit node, transient current peak and width is realized through perl script. Finally, for 8K bits SRAM, the SEU cross section is simulated and fitted, and the saturated SEU cross section obtained is in good agreement with the experimental data. The statistical analysis of Single Event Transient (SET) on SRAM peripheral circuits verifies the effectiveness of the fault injection method.