Analysis of Novel 3300V Embedded Ballast Resistor IGBT with Robust Short-circuit Capability

A novel 3300V Embedded Ballast Resistor (EmBR) IGBT with robust short-circuit capability is proposed and the analytic model covering the structural parameters of the EmBR during on-state is established. The influence of doping concentration, length and thickness of the EmBR region on short-circuit current and short-circuit withstand time is simulated by TCAD. Due to the negative temperature characteristic of carrier mobility and injection enhancement (IE) effect, the resistance of EmBR increases at high temperature but is comparable to the conventional enhanced channel resistance at room temperature. As a result, the saturation current during short-circuit is suppressed which reaches a good agreement with the analytic model. Compared with conventional IGBTs, the short-circuit current of the proposed structure is decreased by 33.7% and the short-circuit withstand time can be increased by 60.6%.