GaN Planar Schottky Barrier Diode with Cut-Off Frequency of 360 GHz

GaN Schottky barrier diodes have great potential for high power, high temperature and high frequency applications. We describe in this paper the design, fabrication and measurement of the GaN planar SBD with the air-birdge technology and electroplating technology for reducing the parasitic parameters. The typical On-wafer DC current-voltage and small-signal S-parameter measurements were characterized at room temperature, respectively. The impact of anode shape and dimension were investigated. The GaN planar SBD with 3×4μm
²
anode area had a cut-off frequency of 360 GHz and a breakdown voltage of -10 V.