Design of GaN HEMT Class-E Power Amplifier for Satellite Communication

This paper proposed a design of micro-strip line class-E power amplifier based on GaN HEMT devices working at 2.2GHz. By means of part harmonics suppression and inductance effect enhancing in the drain bias circuit, ideal class-E voltage and current waveform at drain and high efficiency were achieved. The combining simulation results demonstrate 74.8% PAE, 15.1dB power gain and 41.16dBm output power with 26dBm input power.