High-Power InGaAs/InAlAs Schottky Photodiode with Low Amplitude-to-Phase Noise Conversion

In the paper, high-power InGaAs/InAlAs Schottky photodiode with low amplitude-to-phase noise conversion is presented. It is shown that photodiode cutoff frequency is 28 GHz and maximal output microwave power is 58 mW at the frequency of 20 GHz. Amplitude-to-phase noise conversion coefficient of the proposed photodiode is demonstrated to be less than 1.5 rad/W at the frequency of 20 GHz.