Modeling Channel Length Scaling Impact on NBTI in RMG Si p-FinFETs

Negative Bias Temperature Instability (NBTI) stress and recovery time kinetics from Replacement Metal Gate (RMG) High-K Metal Gate (HKMG) p-channel FinFETs are measured and modeled. The impact of channel length (L) scaling on shift in threshold voltage (ΔV
_T
), its power-law time exponent (n), Voltage Acceleration Factor (VAF) and Temperature (T) activation (E
_A
) is analyzed. TCAD and bandstructure calculations are utilized to explain the L dependence of experimental data.