Well-Posed Verilog-A Compact Model for Phase Change Memory

In this work, we demonstrate a well-posed compact model for phase change memory (PCM) devices based on Ge
₂
Sb
₂
Te
₅
, (GST) chalcogenide. This model supports all modes of simulation including transient, DC, and AC. The model is developed in Verilog-A and simulated using HSPICE. It is computationally simple and successfully captures the key high level behaviors of memory switching, including the resistance dependence on programming voltages, currents and pulse time-scales.