Quantum Transport Investigation of Threshold Voltage Variability in Sub-10 nm JunctionlessSi Nanowire FETs

In this paper, we use the Non-Equilibrium Green's Function formalism to study the dependence of the threshold voltage variability on the cross-section shape and the gate length in Junction Less Field Effect Transistors. Each configuration, i.e. gate length and cross-section, was investigated using a statistical ensemble of 100 samples. We found that the variability in threshold voltage is increased independently of the cross-section shape when the gate length isshrunk down to 5 nm. We attribute this results to the higher wave function “randomization” in longer gate lengths.