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A DC-60 GHz I/Q Modulator in 45 nm SOI CMOS for Ultra-Wideband 5G Radios | IEEE Conference Publication | IEEE Xplore

A DC-60 GHz I/Q Modulator in 45 nm SOI CMOS for Ultra-Wideband 5G Radios


Abstract:

This paper presents a DC-60 GHz I/Q modulator/transmitter chip in 45 nm SOI CMOS, that can serve as a critical building block for next generation multi-standard and high-...Show More

Abstract:

This paper presents a DC-60 GHz I/Q modulator/transmitter chip in 45 nm SOI CMOS, that can serve as a critical building block for next generation multi-standard and high-capacity wireless backhaul links. The modulator consists of a wideband quadrature signal generator, wideband buffers and two current-combined DC-100 GHz low-noise double-balanced mixers driven in quadrature. The 1.4mm2 modulator chip achieves 60 dB of dynamic range in a 1 GHz bandwidth, with an OP1dB of -10 to -12 dBm, thus enabling spectrally-efficient high-order modulation schemes such as 256-QAM. The I/Q modulator achieves 200 Gbps in 16-QAM (50 Gbaud/s), while consuming 200 mW, resulting in record 1 pJ/bit modulation efficiency. In addition to backhaul links, the modulator is an attractive and cost-effective alternative to short-range optical links for data center interconnects (DCI) applications.
Date of Conference: 15-17 October 2018
Date Added to IEEE Xplore: 29 November 2018
ISBN Information:
Conference Location: San Diego, CA, USA
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA

Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA
Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, CA, USA
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