Behavioral Model of SiC MOSFET on Hard-Switching Condition

A behavioral model of SiC MOSFET on hard-switching condition is proposed. The model is based on double pulse test (DPT), in which the SiC MOSFET is combined with a SiC Schottky Barrier Diode (SBD). The nonlinearity of the junction capacitance and parasitic elements in the circuit are considered. To reduce the complexity of commonly proposed models, the model develops average value equations rather than differential equations to describe the circuit and estimate the switching time. The results of calculation and experiments are compared with previously proposed model, which shows that the model can provide a simple prediction of SiC MOSFET hard-switching characteristics.