Properties of Tin-Sulfide Films Formed by Annealing Process of Sn Thin-Film with Sulfur Powder

SnS films were formed by annealing process of Sn precursor thin-films and their properties were investigated. The Sn thin-films were deposited on glass substrate by using thermal evaporation and the deposited Sn thin-films were annealed with sulfur powder in a graphite box using tube furnace at temperature 250, 300, and 350 °C. As the annealing temperature increased from 300 to 350 °C, the thickness and crystallinity of SnS films also increased. In the XRD patterns, SnS films formed at temperature 300 and 350 °C showed an orthorhombic structure with (100) orientation. The band gap energy of SnS films annealed at 300 and 350 °C determined 1.24 and 1.23 respectively.