24% Efficiency Hybrid Cell Technology Integrating a Low-cost, Precision-Pattern Cu Metallization Used for Advanced PCB

Sunpreme combines Hybrid Cell Technology (HCT) with proven processes from the microelectronics industry to develop a simplified toolset and process for copper metallization on bifacial Si heterojunction cells. The result yields over 24% efficiency with a production ready process using standard production n-type Cz c-Si wafers (large area cell 244.3cm
²
). The cell starts from grid patterning through Cu electrochemical plating to achieve 20um width and 30um height fingers. All Cu metallization process and equipment use optimized PCB industry standard concepts to handle thin, fragile silicon wafers in high volume manufacturing, reducing all-in cost below $0.32/Wp. This low-cost, high-throughput manufacturing process captures the advantages of Cu (narrower fingers line width, lower resistivity and lower material cost) without the added costs of state of the art Cu-on-Silicon PV manufacturing methods and will yield 3.7cents/kWh LCOE. Sunpreme Cu metallization development project is funded by two US government grants.